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dc.contributor.authorBenMoussa, A.
dc.contributor.authorSoltani, A.
dc.contributor.authorHaenen, K.
dc.contributor.authorKroth, U.
dc.contributor.authorMortet, V.
dc.contributor.authorBarkad, H.A.
dc.contributor.authorBolsee, D.
dc.contributor.authorHermans, C.
dc.contributor.authorRichter, M.
dc.contributor.authorDe Jaeger, J.C.
dc.contributor.authorHochedez, J.F.
dc.date2008
dc.date.accessioned2016-10-10T13:45:21Z
dc.date.available2016-10-10T13:45:21Z
dc.identifier.urihttps://orfeo.belnet.be/handle/internal/4446
dc.descriptionA new large-size metal–semiconductor–metal photoconductor device of 4.6 mm in diameter based on diamond material has been reprocessed and characterized in the vacuum-ultraviolet (VUV) wavelength range. The metal finger contacts have been processed to 2 µm in width with spacing between the contacts of 5 µm for a bias voltage of 5 V. The responsivity, stability, linearity and homogeneity have been tested. Solutions and progresses on diamond processing are identified and are reported. In the VUV wavelength range of interest, the diamond photodetector is sensitive with a maximum response of 48 mA W−1 at 210 nm with a corresponding external quantum efficiency of 42%, homogenous and stable under short irradiation. It indicates a 200–400 nm rejection ratio of more than four orders of magnitude and demonstrates the advantages of diamond-based detectors in terms of high rejection ratio and high output signal for VUV solar observation missions.
dc.languageeng
dc.titleNew developments on diamond photodetector for VUV solar observations
dc.typeArticle
dc.subject.frascatiPhysical sciences
dc.audienceScientific
dc.source.titleSemiconductor Science and Technology
dc.source.volume23
dc.source.issue3
dc.source.page35026
Orfeo.peerreviewedNo
dc.identifier.doi10.1088/0268-1242/23/3/035026


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