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Poly-SiGe-based MEMS xylophone bar magnetometer

dc.contributor.authorRochus, V.
dc.contributor.authorJansen, R.
dc.contributor.authorTilmans, H.A.C.
dc.contributor.authorRottenberg, X.
dc.contributor.authorChen, C.
dc.contributor.authorRanvier, S.
dc.contributor.authorLamy, H.
dc.contributor.authorRochus, P.
dc.date2012
dc.date.accessioned2016-03-29T10:07:38Z
dc.date.available2016-03-29T10:07:38Z
dc.identifier.urihttps://orfeo.belnet.be/handle/internal/3046
dc.descriptionThis paper presents the design, fabrication and preliminary characterization of highly sensitive MEMS-based Xylophone Bar Magnetometers (XBMs) realized in imec's poly-SiGe MEMS technology. Key for our Lorentz force driven capacitively sensed resonant sensor are the combination of reasonably high Q-factor and conductivity of imec's poly-SiGe, our optimized multiphysics sensor design targeting the maximization of the Q-factor in a wide temperature range as well as our proprietary monolithic above-CMOS integration and packaging schemes. Prototypes 3-axis devices were fabricated and characterized. We present optical vibrometer and electrical S-parameter measurements of XBMs performed in vacuum with a reference magnet at increasing sensor separation. The optical oscillation amplitude is well correlated with the magnetic field amplitude. The electrical 2-port measurements, 1st port as Lorentz force actuator and 2nd port as capacitive sensor, also reproduces the designed magnetic field dependence. This opens the way towards the on-chip integration of small footprint extremely sensitive magnetometers.
dc.languageeng
dc.titlePoly-SiGe-based MEMS xylophone bar magnetometer
dc.typeConference
dc.subject.frascatiPhysical sciences
dc.audienceScientific
dc.subject.freeHigh Q factor
dc.subject.freeIn-vacuum
dc.subject.freeIntegration and packaging
dc.subject.freeLorentz force actuators
dc.subject.freeMagnetic field amplitudes
dc.subject.freeMagnetic field dependences
dc.subject.freeMEMS technology
dc.subject.freeMulti-physics
dc.subject.freeOn-chip integration
dc.subject.freeOptical oscillations
dc.subject.freeOptical vibrometer
dc.subject.freePoly-SiGe
dc.subject.freeQ-factors
dc.subject.freeResonant sensors
dc.subject.freeS-Parameter measurements
dc.subject.freeSensor designs
dc.subject.freeSmall footprints
dc.subject.freeWide temperature ranges
dc.subject.freeLorentz force
dc.subject.freeMagnetic fields
dc.subject.freeMagnetometers
dc.subject.freePolysilicon
dc.subject.freeQ factor measurement
dc.subject.freeScattering parameters
dc.subject.freeSilicon alloys
dc.subject.freeSensors
dc.source.titleProceedings of IEEE Sensors
dc.source.page6411484
Orfeo.peerreviewedNo
dc.identifier.doi10.1109/ICSENS.2012.6411484
dc.identifier.scopus2-s2.0-84873965866


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