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Recent developments of wide-bandgap semiconductor based UV sensors

dc.contributor.authorBenMoussa, A.
dc.contributor.authorSoltani, A.
dc.contributor.authorSchühle, U.
dc.contributor.authorHaenen, K.
dc.contributor.authorChong, Y.M.
dc.contributor.authorZhang, W.J.
dc.contributor.authorDahal, R.
dc.contributor.authorLin, J.Y.
dc.contributor.authorJiang, H.X.
dc.contributor.authorBarkad, H.A.
dc.contributor.authorBenMoussa, B.
dc.contributor.authorBolsee, D.
dc.contributor.authorHermans, C.
dc.contributor.authorKroth, U.
dc.contributor.authorLaubis, C.
dc.contributor.authorMortet, V.
dc.contributor.authorDe Jaeger, J.C.
dc.contributor.authorGiordanengo, B.
dc.contributor.authorRichter, M.
dc.contributor.authorScholze, F.
dc.contributor.authorHochedez, J.F.
dc.date2009
dc.date.accessioned2016-04-05T12:19:06Z
dc.date.available2016-04-05T12:19:06Z
dc.identifier.urihttps://orfeo.belnet.be/handle/internal/3279
dc.descriptionFuture missions for space astronomy and solar research require innovative vacuum ultraviolet (VUV) photodetectors. Present UV and VUV detectors exhibit serious limitations in performance, technology complexity and lifetime stability. New developments of metal-semiconductor-metal (MSM) solar-blind photodetectors based on diamond, cubic boron nitride (c-BN), and wurtzite aluminium nitride (AlN) are reported. In the wavelength range of interest, the characteristics of the MSM photodetectors present extremely low dark current, high breakdown voltage, and good responsivity. Diamond, c-BN, and AlN MSM photodetectors are sensitive and stable under UV irradiation. They show a 200 nm to 400 nm rejection ratio of more than four orders of magnitude and demonstrate the advantages of wide band gap materials for VUV radiation detection in space. © 2008 Elsevier B.V.
dc.languageeng
dc.titleRecent developments of wide-bandgap semiconductor based UV sensors
dc.typeArticle
dc.subject.frascatiPhysical sciences
dc.audienceScientific
dc.subject.freeAlN
dc.subject.freeAluminium nitride
dc.subject.freeCubic boron nitride (cBN)
dc.subject.freeFour-order
dc.subject.freeFuture mission
dc.subject.freeHigh breakdown voltage
dc.subject.freeMetal semiconductor metal
dc.subject.freeMSM
dc.subject.freeMSM photodetector
dc.subject.freeRejection ratios
dc.subject.freeResponsivity
dc.subject.freeSolar research
dc.subject.freeSolar-blind photodetectors
dc.subject.freeSolarblind
dc.subject.freeSpace astronomy
dc.subject.freeUV irradiation
dc.subject.freeUV photodetector
dc.subject.freeUV sensor
dc.subject.freeUV- and
dc.subject.freeVacuum ultraviolets
dc.subject.freeVUV radiation
dc.subject.freeWavelength ranges
dc.subject.freeWBGM
dc.subject.freeWide band-gap material
dc.subject.freeWide-band-gap semiconductor
dc.subject.freeWurtzite
dc.subject.freeAluminum compounds
dc.subject.freeBoron
dc.subject.freeBoron nitride
dc.subject.freeCubic boron nitride
dc.subject.freeCurrent voltage characteristics
dc.subject.freeDiamonds
dc.subject.freeElectric conductivity
dc.subject.freeEnergy gap
dc.subject.freeHeterojunction bipolar transistors
dc.subject.freeIonization of gases
dc.subject.freeNitrides
dc.subject.freeOptoelectronic devices
dc.subject.freeSensors
dc.subject.freeZinc sulfide
dc.subject.freePhotodetectors
dc.source.titleDiamond and Related Materials
dc.source.volume18
dc.source.issue5-8
dc.source.page860-864
Orfeo.peerreviewedYes
dc.identifier.doi10.1016/j.diamond.2008.11.013
dc.identifier.scopus2-s2.0-67349263464


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