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    Recent developments of wide-bandgap semiconductor based UV sensors

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    BenMoussa(2009b).pdf (757.9Kb)
    Authors
    BenMoussa, A.
    Soltani, A.
    Schühle, U.
    Haenen, K.
    Chong, Y.M.
    Zhang, W.J.
    Dahal, R.
    Lin, J.Y.
    Jiang, H.X.
    Barkad, H.A.
    BenMoussa, B.
    Bolsee, D.
    Hermans, C.
    Kroth, U.
    Laubis, C.
    Mortet, V.
    De Jaeger, J.C.
    Giordanengo, B.
    Richter, M.
    Scholze, F.
    Hochedez, J.F.
    Show allShow less
    Discipline
    Physical sciences
    Subject
    AlN
    Aluminium nitride
    Cubic boron nitride (cBN)
    Four-order
    Future mission
    High breakdown voltage
    Metal semiconductor metal
    MSM
    MSM photodetector
    Rejection ratios
    Responsivity
    Solar research
    Solar-blind photodetectors
    Solarblind
    Space astronomy
    UV irradiation
    UV photodetector
    UV sensor
    UV- and
    Vacuum ultraviolets
    VUV radiation
    Wavelength ranges
    WBGM
    Wide band-gap material
    Wide-band-gap semiconductor
    Wurtzite
    Aluminum compounds
    Boron
    Boron nitride
    Cubic boron nitride
    Current voltage characteristics
    Diamonds
    Electric conductivity
    Energy gap
    Heterojunction bipolar transistors
    Ionization of gases
    Nitrides
    Optoelectronic devices
    Sensors
    Zinc sulfide
    Photodetectors
    Audience
    Scientific
    Date
    2009
    Metadata
    Show full item record
    Description
    Future missions for space astronomy and solar research require innovative vacuum ultraviolet (VUV) photodetectors. Present UV and VUV detectors exhibit serious limitations in performance, technology complexity and lifetime stability. New developments of metal-semiconductor-metal (MSM) solar-blind photodetectors based on diamond, cubic boron nitride (c-BN), and wurtzite aluminium nitride (AlN) are reported. In the wavelength range of interest, the characteristics of the MSM photodetectors present extremely low dark current, high breakdown voltage, and good responsivity. Diamond, c-BN, and AlN MSM photodetectors are sensitive and stable under UV irradiation. They show a 200 nm to 400 nm rejection ratio of more than four orders of magnitude and demonstrate the advantages of wide band gap materials for VUV radiation detection in space. © 2008 Elsevier B.V.
    Citation
    BenMoussa, A.; Soltani, A.; Schühle, U.; Haenen, K.; Chong, Y.M.; Zhang, W.J.; Dahal, R.; Lin, J.Y.; Jiang, H.X.; Barkad, H.A.; BenMoussa, B.; Bolsee, D.; Hermans, C.; Kroth, U.; Laubis, C.; Mortet, V.; De Jaeger, J.C.; Giordanengo, B.; Richter, M.; Scholze, F.; Hochedez, J.F. (2009). Recent developments of wide-bandgap semiconductor based UV sensors. , Diamond and Related Materials, Vol. 18, Issue 5-8, 860-864, DOI: 10.1016/j.diamond.2008.11.013.
    Identifiers
    uri: https://orfeo.belnet.be/handle/internal/3279
    doi: http://dx.doi.org/10.1016/j.diamond.2008.11.013
    scopus: 2-s2.0-67349263464
    Type
    Article
    Peer-Review
    Yes
    Language
    eng
    Links
    NewsHelpdeskBELSPO OA Policy

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