Low temperature anneal of electron irradiation induced defects in p type silicon
| dc.contributor.author | Trauwaert, M.-A. | |
| dc.contributor.author | Vanhellemont, J. | |
| dc.contributor.author | Maes, H.E. | |
| dc.contributor.author | Van Bavel, A.-M. | |
| dc.contributor.author | Langouche, G. | |
| dc.contributor.author | Clauws, P. | |
| dc.date | 1998 | |
| dc.date.accessioned | 2017-05-19T11:16:15Z | |
| dc.date.available | 2017-05-19T11:16:15Z | |
| dc.identifier.uri | https://orfeo.belnet.be/handle/internal/5417 | |
| dc.description | Two dominant defect levels with activation energy Ev + 0·19 eV and Ev + 0·36 eV (CsCi or Ci Oi complex) are created in the lower part of the bandgap after low energy electron irradiation of boron doped float zone or Czochralski silicon. The Ev + 0·19 eV level is associated to the donor state of the divacancy (V0/+ 2), since the annealing behaviour of this level in the temperature range between 250 and 400°C is in good agreement with the behaviour reported for the divacancy in silicon. However, there still exists some controversy in the literature about the exact position of the donor level V0/+ 2 for which values are reported at around Ev + 0·20 eV or Ev + 0·24 eV. This paper also reports on the transformation of the Ev + 0·19 eV level appearing immediately after electron irradiation in p type silicon to the Ev + 0·24 eV level after annealing at low temperatures for several days. | |
| dc.language | eng | |
| dc.title | Low temperature anneal of electron irradiation induced defects in p type silicon | |
| dc.type | Article | |
| dc.subject.frascati | Physical sciences | |
| dc.audience | Scientific | |
| dc.source.title | Materials Science and Technology | |
| dc.source.volume | 14 | |
| dc.source.issue | 12 | |
| dc.source.page | 1295-1296 | |
| Orfeo.peerreviewed | Yes | |
| dc.identifier.doi | 10.1179/mst.1998.14.12.1295 | |
| dc.identifier.scopus | 2-s2.0-1542673379 |
