Low temperature anneal of electron irradiation induced defects in p type silicon
Van Bavel, A.-M.
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Two dominant defect levels with activation energy Ev + 0·19 eV and Ev + 0·36 eV (CsCi or Ci Oi complex) are created in the lower part of the bandgap after low energy electron irradiation of boron doped float zone or Czochralski silicon. The Ev + 0·19 eV level is associated to the donor state of the divacancy (V0/+ 2), since the annealing behaviour of this level in the temperature range between 250 and 400°C is in good agreement with the behaviour reported for the divacancy in silicon. However, there still exists some controversy in the literature about the exact position of the donor level V0/+ 2 for which values are reported at around Ev + 0·20 eV or Ev + 0·24 eV. This paper also reports on the transformation of the Ev + 0·19 eV level appearing immediately after electron irradiation in p type silicon to the Ev + 0·24 eV level after annealing at low temperatures for several days.
CitationTrauwaert, M.-A.; Vanhellemont, J.; Maes, H.E.; Van Bavel, A.-M.; Langouche, G.; Clauws, P. (1998). Low temperature anneal of electron irradiation induced defects in p type silicon. , Materials Science and Technology, Vol. 14, Issue 12, 1295-1296, DOI: 10.1179/mst.19220.127.116.115.