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    Low temperature anneal of electron irradiation induced defects in p type silicon

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    Trauwaert(1998a).pdf (622.2Kb)
    Authors
    Trauwaert, M.-A.
    Vanhellemont, J.
    Maes, H.E.
    Van Bavel, A.-M.
    Langouche, G.
    Clauws, P.
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    Discipline
    Physical sciences
    Audience
    Scientific
    Date
    1998
    Metadata
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    Description
    Two dominant defect levels with activation energy Ev + 0·19 eV and Ev + 0·36 eV (CsCi or Ci Oi complex) are created in the lower part of the bandgap after low energy electron irradiation of boron doped float zone or Czochralski silicon. The Ev + 0·19 eV level is associated to the donor state of the divacancy (V0/+ 2), since the annealing behaviour of this level in the temperature range between 250 and 400°C is in good agreement with the behaviour reported for the divacancy in silicon. However, there still exists some controversy in the literature about the exact position of the donor level V0/+ 2 for which values are reported at around Ev + 0·20 eV or Ev + 0·24 eV. This paper also reports on the transformation of the Ev + 0·19 eV level appearing immediately after electron irradiation in p type silicon to the Ev + 0·24 eV level after annealing at low temperatures for several days.
    Citation
    Trauwaert, M.-A.; Vanhellemont, J.; Maes, H.E.; Van Bavel, A.-M.; Langouche, G.; Clauws, P. (1998). Low temperature anneal of electron irradiation induced defects in p type silicon. , Materials Science and Technology, Vol. 14, Issue 12, 1295-1296, DOI: 10.1179/mst.1998.14.12.1295.
    Identifiers
    uri: https://orfeo.belnet.be/handle/internal/5417
    doi: http://dx.doi.org/10.1179/mst.1998.14.12.1295
    scopus: 2-s2.0-1542673379
    Type
    Article
    Peer-Review
    Yes
    Language
    eng
    Links
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